Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories

Y. X. Liu, T. Kamei, T. Matsukawa, Kazuhiko Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, T. Hayashida, K. Sakamoto, A. Ogura, M. Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The tri-gate (TG)- and double-gate (DG)-type poly-Si fin-channel split-gate flash memories with a thin n +-poly-Si floating-gate (FG) have successfully been fabricated, and their electrical characteristics including the variations of threshold voltage (Vt) and S-slope have been comparatively investigated. It was experimentally found that better short-channel effect (SCE) immunity, smaller V t variations, and a higher program speed are obtained in the TG-type flash memories than in the DG-type memories. Moreover, it was also confirmed that over-erase is effectively suppressed by split-gate structure.

Original languageEnglish
Title of host publication2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs
Publication statusPublished - 2012 Oct 12
Externally publishedYes
Event2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States
Duration: 2012 Jun 102012 Jun 11

Publication series

Name2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Other

Other2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
CountryUnited States
CityHonolulu, HI
Period12/6/1012/6/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Liu, Y. X., Kamei, T., Matsukawa, T., Endo, K., O'uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Hayashida, T., Sakamoto, K., Ogura, A., & Masahara, M. (2012). Comparative study of tri-gate- and double-gate-type poly-Si fin-channel split-gate flash memories. In 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012 [6243318] (2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012). https://doi.org/10.1109/SNW.2012.6243318