We performed a comparative study of strain fluctuation in strained-Si grown on SiGe-on-insulator (SGOI) and SiGe virtual substrates, and clarified the origin of the strain fluctuation in the strained-Si layer. A periodic strain fluctuation, which reflects the strain field of underlying cross-hatch pattern, was observed in the sample on the virtual substrate. On the other hand, a feature-less strain fluctuation with suppressed amplitude was observed in the sample on SGOI substrate. By analyzing the correlation of the Raman peak positions of the Si-Si mode in strained-Si and SiGe, the compositional fluctuation in SiGe was found to be the origin of the strain fluctuation.
|Number of pages||9|
|Publication status||Published - 2004 Dec 1|
|Event||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States|
Duration: 2004 Oct 3 → 2004 Oct 8
|Other||SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium|
|Period||04/10/3 → 04/10/8|
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