Comparative study of strain fluctuation in strained-Si on SiGe-on-insulator and SiGe virtual substrate

Kentaro Kutsukake, Noritaka Usami, Toru Ujihara, Kozo Fujiwara, Kazuo Nakajima

Research output: Contribution to conferencePaper

Abstract

We performed a comparative study of strain fluctuation in strained-Si grown on SiGe-on-insulator (SGOI) and SiGe virtual substrates, and clarified the origin of the strain fluctuation in the strained-Si layer. A periodic strain fluctuation, which reflects the strain field of underlying cross-hatch pattern, was observed in the sample on the virtual substrate. On the other hand, a feature-less strain fluctuation with suppressed amplitude was observed in the sample on SGOI substrate. By analyzing the correlation of the Raman peak positions of the Si-Si mode in strained-Si and SiGe, the compositional fluctuation in SiGe was found to be the origin of the strain fluctuation.

Original languageEnglish
Pages1179-1187
Number of pages9
Publication statusPublished - 2004 Dec 1
EventSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

OtherSiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • Engineering(all)

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    Kutsukake, K., Usami, N., Ujihara, T., Fujiwara, K., & Nakajima, K. (2004). Comparative study of strain fluctuation in strained-Si on SiGe-on-insulator and SiGe virtual substrate. 1179-1187. Paper presented at SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium, Honolulu, HI, United States.