Comparative study of silicon quantum dot formation In - situ grown with a gas mixture of SiH4+N2 and SiH4+NH3

Tae Youb Kim, Nae Man Park, In Kyu You, Cheol Jong Choi, Ansoon Kim, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this study, we investigated the growth mechanism of silicon quantum dots (Si QDs) embedded in a Si-nitride film formed by using plasma-enhanced chemical vapor deposition. Special attention was paid to the influence of the nitrogen source, especially in molecular nitrogen (N2) and ammonia (NH3). We found that the nitrogen source played a decisive role in determining the location of nucleation sites of Si QDs. In the case of the SiH4+NH3 gas source, the Si QDs mainly nucleated at the surface of the Si substrate, in contrast to the case of SiH4+N2 which should no such tendency. We believe that a specific surface reaction of the initially adsorbed NH3 molecules forming lowdimensional structures (NH2-Si-Si-H) on the Si substrate provide the nucleation sites for Si QDs when using a SiH4+NH3 plasma.

Original languageEnglish
Pages (from-to)308-311
Number of pages4
JournalJournal of the Korean Physical Society
Issue number2
Publication statusPublished - 2011 Aug 12


  • In-situ formed Si-QDs
  • Silicon Quantum Dots (Si-QDs)
  • Silicon nitride films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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