Comparative study of shallow acceptor levels in unintentionally doped p-type GaSe crystals prepared by the Bridgman and liquid phase solution growth methods

Yuki Nagai, Kensaku Maeda, Kohei Suzuki, Yutaka Oyama

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

GaSe crystals were grown by liquid phase solution growth, using the temperature difference method under controlled vapor pressure. Temperature-dependent Hall effect measurements were used to show the different thermal activation energies of the acceptor levels of the commercially available Bridgman-grown GaSe crystals and our liquid phase solution-grown crystals. Unintentionally doped GaSe crystals showed p-type conduction; also, the thermal activation energies of the acceptor levels of the Bridgman-grown crystals were 30 meV + E v and 50 meV + E v while that of liquid phase-grown crystals was 15 meV + E v (where E v is the energy of the valence band). We conclude that low temperature growth and stoichiometry control can effectively inhibit native point defect formation.

Original languageEnglish
Pages (from-to)3117-3120
Number of pages4
JournalJournal of Electronic Materials
Volume43
Issue number9
DOIs
Publication statusPublished - 2014 Sep

Keywords

  • accepter level
  • gallium selenide
  • nonlinear optical material
  • solution growth
  • stoichiometry control

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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