Comparative study of Ga, In, and Mg doped ZnO thin-film scintillator with Geiger mode APD

Takayuki Yanagida, Yutaka Fujimoto, Yui Yokota, Shuji Maeo, Kei Kamada, Akira Yoshikawa, Miyuki Miyamoto, Jun Kobayashi, Taichi Tokutake, Hideyuki Sekiwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ga 25, 55, and 552 ppm doped, In 25, 53, and 141 ppm doped, Mg 1, 5, 10, 13 mol% doped ZnO thin film scintillators were grown by the Liquid Phase Epitaxy (LPE) method. Their transmittance, α-ray induced emission spectra were evaluated. The transmittance reached to 80% at wavelength longer than 390 nm for all the crystals. Two emission lines appeared at 390 and 550 nm, due to the free and bound excitons, respectively. Coupled with Multi Pixel Photon Counter (MPPC), the light yield and decay time were evaluated.

Original languageEnglish
Title of host publication2009 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2009
Pages1452-1455
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2009 - Orlando, FL, United States
Duration: 2009 Oct 252009 Oct 31

Publication series

NameIEEE Nuclear Science Symposium Conference Record
ISSN (Print)1095-7863

Other

Other2009 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2009
CountryUnited States
CityOrlando, FL
Period09/10/2509/10/31

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Radiology Nuclear Medicine and imaging

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    Yanagida, T., Fujimoto, Y., Yokota, Y., Maeo, S., Kamada, K., Yoshikawa, A., Miyamoto, M., Kobayashi, J., Tokutake, T., & Sekiwa, H. (2009). Comparative study of Ga, In, and Mg doped ZnO thin-film scintillator with Geiger mode APD. In 2009 IEEE Nuclear Science Symposium Conference Record, NSS/MIC 2009 (pp. 1452-1455). [5402307] (IEEE Nuclear Science Symposium Conference Record). https://doi.org/10.1109/NSSMIC.2009.5402307