Comparative study of charge trapping type SOI-FinFET flash memories with different blocking layer materials

Yongxun Liu, Toshihide Nabatame, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Toyohiro Chikyow, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al2O3 and SiO2 have successfully been fabricated, and their electrical characteristics including short-channel effect (SCE) immunity, threshold voltage (Vt) variability, and the memory characteristics have been comparatively investigated. It was experimentally found that the better SCE immunity and a larger memory window are obtained by introducing a high-k Al2O3 blocking layer instead of a SiO2 blocking layer. It was also confirmed that the variability of Vt before and after one program/erase (P/E) cycle is almost independent of the blocking layer materials.

Original languageEnglish
Pages (from-to)153-167
Number of pages15
JournalJournal of Low Power Electronics and Applications
Volume4
Issue number2
DOIs
Publication statusPublished - 2014 Jun 20
Externally publishedYes

Keywords

  • Blocking layer
  • Charge trapping (CT)
  • FinFET
  • Flash memory
  • High-k metal gate
  • Silicon on insulator (SOI)
  • Variability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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