Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

Ramesh K. Pokharel, G. Zhang, S. Amalina, Kousuke Hikichi, Shuji Tanaka, Ken Ya Hashimoto, Shinji Taniguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages316-319
Number of pages4
ISBN (Electronic)9781509001569
DOIs
Publication statusPublished - 2016 Feb 17
EventIEEE MTT-S International Microwave and RF Conference, IMaRC 2015 - Hyderabad, India
Duration: 2015 Dec 102015 Dec 12

Publication series

NameIEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015

Other

OtherIEEE MTT-S International Microwave and RF Conference, IMaRC 2015
CountryIndia
CityHyderabad
Period15/12/1015/12/12

Keywords

  • CMOS
  • FBAR
  • FOM
  • oscillator
  • phase noise

ASJC Scopus subject areas

  • Computer Networks and Communications

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