Compact triangulation distance sensor realized by wafer bending technique

Minoru Sasaki, Satoshi Endou, Kazuhiro Hane

Research output: Contribution to journalConference article

Abstract

The triangulation distance sensor is constructed using the originally proposed wafer bending technique. Since the bending process is final in the fabrication sequence, the planer photolighography can be combined. On the Si wafer, the elements are pre-aligned at the unfolded planer condition. The position sensitive detector (PSD), mirror, and alignment pit for the collimation ball lens are prepared. The realized sensor substrate is 1.4mm in depth. Taking the advantage of the batch fabrication, 2×2 sensor array is prepared. The dynamic range of 4mm with ± 1 % noise is confirmed.

Original languageEnglish
Pages (from-to)19-26
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5455
DOIs
Publication statusPublished - 2004 Dec 2
EventMEM, MOEMS, and Micromachining - Strasbourg, France
Duration: 2004 Apr 292004 Apr 30

Keywords

  • Prealignment
  • Three-dimensional structure
  • Triangulation distance sensor
  • Wafer bending technique

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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