Compact modeling of phase-change memories

K. Sonoda, A. Sakai, M. Moniwa, K. Ishikawa, O. Tsuchiya, Y. Inoue

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A compact model for a phase-change memory cell is presented and confirmed by measurement. The model reproduces the non-linear current-voltage behavior of both set and reset states. The temperature-dependent crystallization and amorphization of the phase-change layer are taken into account in order to express resistance changes between set and reset states. The heat of fusion is also taken into account in the calculation of the amorphization.

    Original languageEnglish
    Title of host publication2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
    PublisherSpringer-Verlag Wien
    Pages137-140
    Number of pages4
    ISBN (Print)9783211728604
    DOIs
    Publication statusPublished - 2007 Jan 1
    Event12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria
    Duration: 2007 Sep 252007 Sep 27

    Publication series

    Name2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

    Other

    Other12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
    CountryAustria
    CityVienna
    Period07/9/2507/9/27

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Modelling and Simulation

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  • Cite this

    Sonoda, K., Sakai, A., Moniwa, M., Ishikawa, K., Tsuchiya, O., & Inoue, Y. (2007). Compact modeling of phase-change memories. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 137-140). (2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_33