'COMMON ANION RULE' IN COMPOUND SEMICONDUCTOR MIS SYSTEMS.

H. Hasegawa, H. Ohno, R. Katumi

Research output: Contribution to journalConference articlepeer-review

Abstract

Recent rapid progress in the compound semiconductor high-speed integrated circuit technology makes understanding and control of insulator-semiconductor(I-S) interface indispensable for further progress. This paper investigates the interface state distributions in various compound semiconductor MIS interfaces including GaAs, GaP, InP and In//xGa//1// minus //xAs, and shows that a novel strong correlation exists between I-S interface and metal-insulator(M-S) that is very different from the Spicer's unified model. The new finding is that the energy positions for the N//s//s minimum (E//m) in the I-S interfaces agree with the Fermi-level pinning positions in the M-S interfaces which are known to obey the 'common anion rule'.

Original languageEnglish
Pages (from-to)272-273
Number of pages2
JournalElectrochemical Society Extended Abstracts
Volume85-2
Publication statusPublished - 1985
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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