COMMON ANION RULE IN COMPOUND SEMICONDUCTOR MIS SYSTEMS.

H. Hasegawa, Hideo Ohno, R. Katumi

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Density distribution and photoionization properties of interface states in GaAs, InP, GaP and InGaAs metal-insulator-semiconductor (MIS) interfaces are investigated on the basis of C-V and photocapacitance transient spectroscopy (PCTS) measaurement. U-shaped distributions without any characteristic peaks were observed. Energy location for minimum state density was found to be a characteristic point for each semiconductor. It was found that this location agrees within plus or minus 0. 1 ev with the Fermi level pinning position at the metal-semiconductor interfaces, which is known to obey empirically the common anion rule. It is also found that the photon energy dependence of the photoionization cross-section is similar for Si, GaAs, InP and InGaAs. The unified defect cannot explain these experimental results. A surface disorder model is shown to be capable of explaining the experimental observation.

Original languageEnglish
Pages (from-to)126-139
Number of pages14
JournalProceedings - The Electrochemical Society
Volume86-3
Publication statusPublished - 1986 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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