Commercial Production of Low-k PZT film using Sputtering Method

Mario Kiuchi, Ryoma Miyake, Shinya Yoshida, Shuji Tanaka, Tsuyoshi Takemoto, Yukitaka Yamaguchi, Kenji Komaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Monocrystalline-like epitaxial PZT films for commercial use are described for piezoelectric MEMS applications. The composition ratios of Zr and Ti in the films are Morphotropic phase boundary (52:48) and Ti rich (42:58). The films with a thickness of 1 μm to 2 μm exhibit typical transverse piezoelectric d31 coefficients of-185 pm/V and-149 pm/V, respectively. Relative dielectric permittivities are 430 and 264. Dielectric losses are 0.015 and 0.020. Both of films of figure-of-merit for MEMS device are more than 50 GPa. These films are commercially available for piezoelectric MEMS device development and production.

Original languageEnglish
Title of host publicationIEEE Sensors, SENSORS 2020 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728168012
DOIs
Publication statusPublished - 2020 Oct 25
Event2020 IEEE Sensors, SENSORS 2020 - Virtual, Rotterdam, Netherlands
Duration: 2020 Oct 252020 Oct 28

Publication series

NameProceedings of IEEE Sensors
Volume2020-October
ISSN (Print)1930-0395
ISSN (Electronic)2168-9229

Conference

Conference2020 IEEE Sensors, SENSORS 2020
CountryNetherlands
CityVirtual, Rotterdam
Period20/10/2520/10/28

Keywords

  • epitaxial
  • piezoelectric
  • PZT
  • sputtering
  • thin film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Commercial Production of Low-k PZT film using Sputtering Method'. Together they form a unique fingerprint.

Cite this