Comment on "contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions"

Masashi Suezawa, Yoshiaki Iijima, Ichiro Yonenaga

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Our main comment is that the data at low temperatures of Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206] and those of Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] may not have been due to intrinsic vacancies but rather to extrinsic vacancies generated at carbon and/or vacancy clusters, depending on the specimens used.

Original languageEnglish
Article number117201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number11
DOIs
Publication statusPublished - 2014 Sep 24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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