Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

Y. Morita; Y. Hayashi; H. Tsuchiura; M. Nishitani

doi:10.1557/opl.2014.544

Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

Y. Morita, Y. Hayashi, H. Tsuchiura, M. Nishitani

ENG - Applied Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg₂Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg₂Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg₂Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.

Original language	English
Pages (from-to)	66-71
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	1642
Issue number	January
DOIs	https://doi.org/10.1557/opl.2014.544
Publication status	Published - 2014
Event	2013 MRS Fall Meeting - Boston, United States Duration: 2013 Dec 1 → 2013 Dec 6

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/opl.2014.544

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@article{ea3c4e30954d4d3aafdd4da1d7b2a012,

title = "Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets",

abstract = "Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg2Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg2Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg2Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.",

author = "Y. Morita and Y. Hayashi and H. Tsuchiura and M. Nishitani",

note = "Publisher Copyright: {\textcopyright} 2014 Materials Research Society. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.; 2013 MRS Fall Meeting ; Conference date: 01-12-2013 Through 06-12-2013",

year = "2014",

doi = "10.1557/opl.2014.544",

language = "English",

volume = "1642",

pages = "66--71",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

number = "January",

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TY - JOUR

T1 - Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

AU - Morita, Y.

AU - Hayashi, Y.

AU - Tsuchiura, H.

AU - Nishitani, M.

PY - 2014

Y1 - 2014

N2 - Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg2Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg2Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg2Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.

AB - Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg2Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg2Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg2Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.

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U2 - 10.1557/opl.2014.544

DO - 10.1557/opl.2014.544

M3 - Conference article

AN - SCOPUS:84939168046

VL - 1642

SP - 66

EP - 71

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

IS - January

T2 - 2013 MRS Fall Meeting

Y2 - 1 December 2013 through 6 December 2013

ER -

Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

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