Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

Y. Morita, Y. Hayashi, Hiroki Tsuchiura, M. Nishitani

Research output: Contribution to journalConference articlepeer-review

Abstract

Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg2Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg2Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg2Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.

Original languageEnglish
Pages (from-to)66-71
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume1642
Issue numberJanuary
DOIs
Publication statusPublished - 2014 Jan 1
Event2013 MRS Fall Meeting - Boston, United States
Duration: 2013 Dec 12013 Dec 6

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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