Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

Y. Morita; Y. Hayashi; Hiroki Tsuchiura; M. Nishitani

doi:10.1557/opl.2014.544

Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

Y. Morita, Y. Hayashi, Hiroki Tsuchiura, M. Nishitani

ENG - Applied Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg₂Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg₂Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg₂Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.

Original language	English
Pages (from-to)	66-71
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	1642
Issue number	January
DOIs	https://doi.org/10.1557/opl.2014.544
Publication status	Published - 2014 Jan 1
Event	2013 MRS Fall Meeting - Boston, United States Duration: 2013 Dec 1 → 2013 Dec 6

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets",

abstract = "Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg2Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg2Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg2Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.",

author = "Y. Morita and Y. Hayashi and Hiroki Tsuchiura and M. Nishitani",

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T1 - Combinatrial study for Mg-Si thin films fabricated by RF co-sputtering with Mg and Si targets

AU - Morita, Y.

AU - Hayashi, Y.

AU - Tsuchiura, Hiroki

AU - Nishitani, M.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg2Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg2Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg2Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.

AB - Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg2Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg2Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg2Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.

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