Abstract
Mg-Si thin films were systematically studied using combinatorial approach by co-sputtering with Mg and Si targets. Single phase of Mg2Si appeared around the stoichiometric composition region, and in Mg-rich region (Mg/Si>4) Mg2Si and Mg phases coexisted. The transition of electrical conduction type from n-type to p-type occurred near the stoichiometric composition region where the strongest peak of Mg2Si appeared in the XRD patterns and the Raman scattering spectra. The p-type conduction was observed in Mg-poor region near the stoichiometric composition region. The results of first principle calculation suggest that Mg vacancy may cause p-type conduction.
Original language | English |
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Pages (from-to) | 66-71 |
Number of pages | 6 |
Journal | Materials Research Society Symposium Proceedings |
Volume | 1642 |
Issue number | January |
DOIs | |
Publication status | Published - 2014 |
Event | 2013 MRS Fall Meeting - Boston, United States Duration: 2013 Dec 1 → 2013 Dec 6 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering