Combinatorial synthesis of BaTiO3-Bi(Mg2/3Nb1/3)O3 thin-films for high-temperature capacitors

Somu Kumaragurubaran, Takahiro Nagata, Kenichiro Takahashi, Sung Gi Ri, Yoshifumi Tsunekawa, Setsu Suzuki, Toyohiro Chikyow

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7 Citations (Scopus)

Abstract

Combinatorial thin-film of (1-x)[BaTiO3]-x[Bi(Mg2/3Nb1/3)O3]-(BT-BMN) was grown on Pt/Ti/SiO2/Si, using pulse laser deposition (PLD) method, by ablating stoichiometric and Bi-10 wt% enriched targets to optimize the Bi content. X-ray photoelectron spectroscopy analysis revealed a linear Bi composition spread. As-deposited films post-annealed at high-temperatures, under oxygen atmosphere, turned into crystalline state. The crystallinity, characterized by X-ray diffraction, is better towards Bi-enriched region. The dielectric constant showed a strong dependency of Bi composition and saturated over Bi-7 wt %. The scanning nonlinear dielectric microscopic investigation revealed ferroelectric phase distribution is better around Bi-7 wt% region where the measured leakage current is also minimum. Dielectric constant over 240 and dielectric constant stability below 13% (25-400 °C range) were obtained.

Original languageEnglish
Article number06FJ02
JournalJapanese journal of applied physics
Volume54
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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