TY - JOUR
T1 - Combinatorial synthesis of BaTiO3-Bi(Mg2/3Nb1/3)O3 thin-films for high-temperature capacitors
AU - Kumaragurubaran, Somu
AU - Nagata, Takahiro
AU - Takahashi, Kenichiro
AU - Ri, Sung Gi
AU - Tsunekawa, Yoshifumi
AU - Suzuki, Setsu
AU - Chikyow, Toyohiro
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/6/1
Y1 - 2015/6/1
N2 - Combinatorial thin-film of (1-x)[BaTiO3]-x[Bi(Mg2/3Nb1/3)O3]-(BT-BMN) was grown on Pt/Ti/SiO2/Si, using pulse laser deposition (PLD) method, by ablating stoichiometric and Bi-10 wt% enriched targets to optimize the Bi content. X-ray photoelectron spectroscopy analysis revealed a linear Bi composition spread. As-deposited films post-annealed at high-temperatures, under oxygen atmosphere, turned into crystalline state. The crystallinity, characterized by X-ray diffraction, is better towards Bi-enriched region. The dielectric constant showed a strong dependency of Bi composition and saturated over Bi-7 wt %. The scanning nonlinear dielectric microscopic investigation revealed ferroelectric phase distribution is better around Bi-7 wt% region where the measured leakage current is also minimum. Dielectric constant over 240 and dielectric constant stability below 13% (25-400 °C range) were obtained.
AB - Combinatorial thin-film of (1-x)[BaTiO3]-x[Bi(Mg2/3Nb1/3)O3]-(BT-BMN) was grown on Pt/Ti/SiO2/Si, using pulse laser deposition (PLD) method, by ablating stoichiometric and Bi-10 wt% enriched targets to optimize the Bi content. X-ray photoelectron spectroscopy analysis revealed a linear Bi composition spread. As-deposited films post-annealed at high-temperatures, under oxygen atmosphere, turned into crystalline state. The crystallinity, characterized by X-ray diffraction, is better towards Bi-enriched region. The dielectric constant showed a strong dependency of Bi composition and saturated over Bi-7 wt %. The scanning nonlinear dielectric microscopic investigation revealed ferroelectric phase distribution is better around Bi-7 wt% region where the measured leakage current is also minimum. Dielectric constant over 240 and dielectric constant stability below 13% (25-400 °C range) were obtained.
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U2 - 10.7567/JJAP.54.06FJ02
DO - 10.7567/JJAP.54.06FJ02
M3 - Article
AN - SCOPUS:84930728113
VL - 54
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 06FJ02
ER -