Combinatorial synthesis of BaTiO3-Bi(Mg2/3Nb1/3)O3 thin-films for high-temperature capacitors

Somu Kumaragurubaran; Takahiro Nagata; Kenichiro Takahashi; Sung Gi Ri; Yoshifumi Tsunekawa; Setsu Suzuki; Toyohiro Chikyow

doi:10.7567/JJAP.54.06FJ02

Combinatorial synthesis of BaTiO₃-Bi(Mg_2/3Nb_1/3)O₃ thin-films for high-temperature capacitors

Somu Kumaragurubaran, Takahiro Nagata, Kenichiro Takahashi, Sung Gi Ri, Yoshifumi Tsunekawa, Setsu Suzuki, Toyohiro Chikyow

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Combinatorial thin-film of (1-x)[BaTiO₃]-x[Bi(Mg_2/3Nb_1/3)O₃]-(BT-BMN) was grown on Pt/Ti/SiO₂/Si, using pulse laser deposition (PLD) method, by ablating stoichiometric and Bi-10 wt% enriched targets to optimize the Bi content. X-ray photoelectron spectroscopy analysis revealed a linear Bi composition spread. As-deposited films post-annealed at high-temperatures, under oxygen atmosphere, turned into crystalline state. The crystallinity, characterized by X-ray diffraction, is better towards Bi-enriched region. The dielectric constant showed a strong dependency of Bi composition and saturated over Bi-7 wt %. The scanning nonlinear dielectric microscopic investigation revealed ferroelectric phase distribution is better around Bi-7 wt% region where the measured leakage current is also minimum. Dielectric constant over 240 and dielectric constant stability below 13% (25-400 °C range) were obtained.

Original language	English
Article number	06FJ02
Journal	Japanese journal of applied physics
Volume	54
Issue number	6
DOIs	https://doi.org/10.7567/JJAP.54.06FJ02
Publication status	Published - 2015 Jun 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Combinatorial synthesis of BaTiO₃-Bi(Mg_2/3Nb_1/3)O₃ thin-films for high-temperature capacitors. / Kumaragurubaran, Somu; Nagata, Takahiro; Takahashi, Kenichiro; Ri, Sung Gi; Tsunekawa, Yoshifumi; Suzuki, Setsu; Chikyow, Toyohiro.

In: Japanese journal of applied physics, Vol. 54, No. 6, 06FJ02, 01.06.2015.

Research output: Contribution to journal › Article › peer-review

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abstract = "Combinatorial thin-film of (1-x)[BaTiO3]-x[Bi(Mg2/3Nb1/3)O3]-(BT-BMN) was grown on Pt/Ti/SiO2/Si, using pulse laser deposition (PLD) method, by ablating stoichiometric and Bi-10 wt% enriched targets to optimize the Bi content. X-ray photoelectron spectroscopy analysis revealed a linear Bi composition spread. As-deposited films post-annealed at high-temperatures, under oxygen atmosphere, turned into crystalline state. The crystallinity, characterized by X-ray diffraction, is better towards Bi-enriched region. The dielectric constant showed a strong dependency of Bi composition and saturated over Bi-7 wt %. The scanning nonlinear dielectric microscopic investigation revealed ferroelectric phase distribution is better around Bi-7 wt% region where the measured leakage current is also minimum. Dielectric constant over 240 and dielectric constant stability below 13% (25-400 °C range) were obtained.",

author = "Somu Kumaragurubaran and Takahiro Nagata and Kenichiro Takahashi and Ri, {Sung Gi} and Yoshifumi Tsunekawa and Setsu Suzuki and Toyohiro Chikyow",

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AU - Kumaragurubaran, Somu

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AU - Takahashi, Kenichiro

AU - Ri, Sung Gi

AU - Tsunekawa, Yoshifumi

AU - Suzuki, Setsu

AU - Chikyow, Toyohiro

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AB - Combinatorial thin-film of (1-x)[BaTiO3]-x[Bi(Mg2/3Nb1/3)O3]-(BT-BMN) was grown on Pt/Ti/SiO2/Si, using pulse laser deposition (PLD) method, by ablating stoichiometric and Bi-10 wt% enriched targets to optimize the Bi content. X-ray photoelectron spectroscopy analysis revealed a linear Bi composition spread. As-deposited films post-annealed at high-temperatures, under oxygen atmosphere, turned into crystalline state. The crystallinity, characterized by X-ray diffraction, is better towards Bi-enriched region. The dielectric constant showed a strong dependency of Bi composition and saturated over Bi-7 wt %. The scanning nonlinear dielectric microscopic investigation revealed ferroelectric phase distribution is better around Bi-7 wt% region where the measured leakage current is also minimum. Dielectric constant over 240 and dielectric constant stability below 13% (25-400 °C range) were obtained.

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Combinatorial synthesis of BaTiO₃-Bi(Mg_2/3Nb_1/3)O₃ thin-films for high-temperature capacitors

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