Combinatorial synthesis approach for optimizing oxide/Si interfaces for the future ULSI

T. Chikyow, P. Ahmet, T. Naruke, K. Nakajima, N. Okazaki, K. Hasegawa, H. Minami, K. Itaka, T. Koida, J. H. Song, M. Yoshimoto, T. Hasegawa, M. Kawasaki, H. Koinima

Research output: Contribution to journalArticlepeer-review

Abstract

A combinatorial material synthesis with temperature gradient heating system was employed to optimizing growth parameters for oxide growth on Si substrate. From the obtained results, it was found the dielectric property depends on the growth temperature as well as the composition. The interface structures were investigated by high resolution electron microscopy with a series of specimens fabricated by micro sampling method. The results showed that amorphous oxide region and SiO2 layer were formed at the interface. It was speculated that the amorphous oxide region contributed to the reduction of the dielectric property. To avoid the amorphous and SiO2 formation at the oxide/Si interface, a few kinds of intermediate layers were inserted and tested to find the possibility of abrupt interface formation.

Original languageEnglish
Pages (from-to)85-95
Number of pages11
JournalMaterials Research Society Symposium - Proceedings
Volume700
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Combinatorial synthesis approach for optimizing oxide/Si interfaces for the future ULSI'. Together they form a unique fingerprint.

Cite this