Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO 2 for the advanced gate stack

K. S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, J. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B. H. Lee, M. Gardner

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


The authors have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on Hf O2 using magnetron co-sputtering to investigate flatband voltage shift (Δ Vfb), work function (m), and leakage current density (JL) variations. A more negative Δ Vfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller m near the Ti-rich corners and higher m near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed m variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloy metal gate electrode systems.

Original languageEnglish
Article number142108
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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