The authors have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on Hf O2 using magnetron co-sputtering to investigate flatband voltage shift (Δ Vfb), work function (m), and leakage current density (JL) variations. A more negative Δ Vfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller m near the Ti-rich corners and higher m near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed m variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloy metal gate electrode systems.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)