Combinatorial study of Ni-Ti-Pt ternary metal gate electrodes on HfO 2 for the advanced gate stack

K. S. Chang, M. L. Green, J. Suehle, E. M. Vogel, H. Xiong, J. Hattrick-Simpers, I. Takeuchi, O. Famodu, K. Ohmori, P. Ahmet, T. Chikyow, P. Majhi, B. H. Lee, M. Gardner

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The authors have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on Hf O2 using magnetron co-sputtering to investigate flatband voltage shift (Δ Vfb), work function (m), and leakage current density (JL) variations. A more negative Δ Vfb is observed close to the Ti-rich corner than at the Ni- and Pt-rich corners, implying smaller m near the Ti-rich corners and higher m near the Ni- and Pt-rich corners. In addition, measured JL values can be explained consistently with the observed m variations. Combinatorial methodologies prove to be useful in surveying the large compositional space of ternary alloy metal gate electrode systems.

Original languageEnglish
Article number142108
JournalApplied Physics Letters
Volume89
Issue number14
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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