Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack

K. S. Chang; M. L. Green; J. Suehle; J. Hattrick-Simpersb; I. Takeuchi; K. Ohmori; T. Chikyow; S. De Gendt; P. Majhi

doi:10.1149/1.2908627

Combinatorial methodology for the exploration of metal gate electrodes on HfO₂ for the advanced gate stack

K. S. Chang, M. L. Green, J. Suehle, J. Hattrick-Simpersb, I. Takeuchi, K. Ohmori, T. Chikyow, S. De Gendt, P. Majhi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Combinatorial methodology offers an efficient platform to accelerate the exploration of new materials. We demonstrate the effectiveness of this technique on the study of new metal gates for the advanced gate stack. We report two examples, Ni-Ti-Pt ternary composition spreads, and Tai_.xAl _xN_y binary composition spreads, using a combinatorial sputtering tool. For the Ni-Ti-Pt library, wavelength dispersive spectroscopy (WDS), and scanning x-ray microdiffraction spectroscopy were used to determine compositions, and structures, respectively. Scanning Kelvin probe microscopy (SKPM) was used to measure work functions (Φ_m) directly. Our results show Φ_m variation is consistent with the variation for the corresponding bulk values. For the Tai_.xAl_xN _y metal gate electrodes, the extracted equivalent oxide thickness (EOT) map suggests thermal stability of the stack, and flat-band voltage shift (△V_fb) varied systematically as per our expectation.

Original language	English
Title of host publication	ECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Pages	151-159
Number of pages	9
Edition	2
DOIs	https://doi.org/10.1149/1.2908627
Publication status	Published - 2008
Externally published	Yes
Event	3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States Duration: 2008 May 18 → 2008 May 22

Publication series

Name	ECS Transactions
Number	2
Volume	13
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
Country/Territory	United States
City	Phoenix, AZ
Period	08/5/18 → 08/5/22

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2908627

Cite this

Chang, K. S., Green, M. L., Suehle, J., Hattrick-Simpersb, J., Takeuchi, I., Ohmori, K., Chikyow, T., De Gendt, S., & Majhi, P. (2008). Combinatorial methodology for the exploration of metal gate electrodes on HfO₂ for the advanced gate stack. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing (2 ed., pp. 151-159). (ECS Transactions; Vol. 13, No. 2). https://doi.org/10.1149/1.2908627

Combinatorial methodology for the exploration of metal gate electrodes on HfO₂ for the advanced gate stack. / Chang, K. S.; Green, M. L.; Suehle, J. et al.

ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. 2008. p. 151-159 (ECS Transactions; Vol. 13, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chang, KS, Green, ML, Suehle, J, Hattrick-Simpersb, J, Takeuchi, I, Ohmori, K, Chikyow, T, De Gendt, S & Majhi, P 2008, Combinatorial methodology for the exploration of metal gate electrodes on HfO₂ for the advanced gate stack. in ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 edn, ECS Transactions, no. 2, vol. 13, pp. 151-159, 3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting, Phoenix, AZ, United States, 08/5/18. https://doi.org/10.1149/1.2908627

Chang KS, Green ML, Suehle J, Hattrick-Simpersb J, Takeuchi I, Ohmori K et al. Combinatorial methodology for the exploration of metal gate electrodes on HfO₂ for the advanced gate stack. In ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 ed. 2008. p. 151-159. (ECS Transactions; 2). doi: 10.1149/1.2908627

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AU - Takeuchi, I.

AU - Ohmori, K.

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