Combinatorial materials exploration and composition tuning for the future gate stack structure

Toyohiro Chikyow, Ken Hasegawa, Tae Tamori, Kenji Ohmori, Naoto Umezawa, Kiyomi Nakajima, Keisaku Yamada, Hideomi Koinuma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A combinatorial ternary composition spread method, which included continuous ternary and binary compositions, was applied for new materials exploration for the future gate stack structure, Rapid estimation of pertivity are carried out by microwave microscope as well as conventional C-V measurement. Structural analyses are performed systematically by combinatorial X-ray diffraction equipment. Higher dielectric region are observed in (HfO 2)x(Y2O3)y(Al 2O3)z and ternary composition area. Al 2O3 was found to have an ability that prevents HfD 2-Y2O3 alloy from crystallization. We found that HfxYxAlzO ternary oxide is a candidate of stable amorphous high-k gate dielectric material with stable interface on Si substrate. The reason of this stability could be explained by charge neutrality based on the phase diagram which is concluded by thermodynamics.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
PublisherIEEE Computer Society
Pages412-417
Number of pages6
ISBN (Print)1424401615, 9781424401611
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period06/10/2306/10/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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