Combinatorial laser molecular beam epitaxy (MBE) growth of Mg-Zn-O alloy for band gap engineering

Yuji Matsumoto, Makoto Murakami, Zhengwu Jin, Akira Ohtomo, Mikk Lippmaa, M. Kawasaki, Hideomi Koinuma

Research output: Contribution to journalArticle

181 Citations (Scopus)

Abstract

We have developed a new combinatorial synthesis system integrating a combinatorial shadow mask into a laser MBE (molecular beam epitaxy) chamber. This combinatorial Laser MBE system can be used for fabricating a number of crystalline films with different compositions on a substrate under programmed temperature and pressure conditions. The method was applied to alloying and band gap engineering of ZnO by positional substitution of Mg into ZnO thin films. The superiority of the combinatorial methodology to conventional one-by-one synthesis is evident from the high linearity of the c-axis length and band gap dependence on Mg content.

Original languageEnglish
Pages (from-to)L603-L605
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume38
Issue number6 A/B
Publication statusPublished - 1999 Jun 15
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Combinatorial laser molecular beam epitaxy (MBE) growth of Mg-Zn-O alloy for band gap engineering'. Together they form a unique fingerprint.

Cite this