Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films

Zhengwu W. Jin; M. Murakami; T. Fukumura; Y. Matsumoto; A. Ohtomo; M. Kawasaki; H. Koinuma

doi:10.1016/S0022-0248(00)00058-0

Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films

Zhengwu W. Jin, M. Murakami, T. Fukumura, Y. Matsumoto, A. Ohtomo, M. Kawasaki, H. Koinuma

Research output: Contribution to journal › Conference article › peer-review

107 Citations (Scopus)

Abstract

Combinatorial laser MBE (CLMBE) method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal ions. The solubility behavior of 3d ions was studied from the viewpoints of ionic radius and valence state. Transmission spectra were classified into four groups with respect to the absorption edge shifts and d-d electron transitions. Mn²⁺ and Co²⁺ ions show very high solubility limits among all the 3d ion species and have high spin electron configurations in ZnO matrix. Such a high throughput synthesis tool as CLMBE is shown to be a powerful tool for exploring novel functionality of thin film materials.

Original language	English
Pages (from-to)	55-58
Number of pages	4
Journal	Journal of Crystal Growth
Volume	214
DOIs	https://doi.org/10.1016/S0022-0248(00)00058-0
Publication status	Published - 2000 Jun 2
Externally published	Yes
Event	The 9th International Conference on II-VI Compounds - Kyoto, Jpn Duration: 1999 Nov 1 → 1999 Nov 5

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(00)00058-0

Cite this

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title = "Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films",

abstract = "Combinatorial laser MBE (CLMBE) method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal ions. The solubility behavior of 3d ions was studied from the viewpoints of ionic radius and valence state. Transmission spectra were classified into four groups with respect to the absorption edge shifts and d-d electron transitions. Mn2+ and Co2+ ions show very high solubility limits among all the 3d ion species and have high spin electron configurations in ZnO matrix. Such a high throughput synthesis tool as CLMBE is shown to be a powerful tool for exploring novel functionality of thin film materials.",

author = "Jin, {Zhengwu W.} and M. Murakami and T. Fukumura and Y. Matsumoto and A. Ohtomo and M. Kawasaki and H. Koinuma",

note = "Funding Information: This work was supported by Proposal Based Program of NEDO (99S12010) and JSPS Research for the Future Program in the area of Atomic-Scale Surface and Interface Dynamics (RFTF96P00205). ; The 9th International Conference on II-VI Compounds ; Conference date: 01-11-1999 Through 05-11-1999",

year = "2000",

month = jun,

day = "2",

doi = "10.1016/S0022-0248(00)00058-0",

language = "English",

volume = "214",

pages = "55--58",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

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TY - JOUR

T1 - Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films

AU - Jin, Zhengwu W.

AU - Murakami, M.

AU - Fukumura, T.

AU - Matsumoto, Y.

AU - Ohtomo, A.

AU - Kawasaki, M.

AU - Koinuma, H.

N1 - Funding Information: This work was supported by Proposal Based Program of NEDO (99S12010) and JSPS Research for the Future Program in the area of Atomic-Scale Surface and Interface Dynamics (RFTF96P00205).

PY - 2000/6/2

Y1 - 2000/6/2

N2 - Combinatorial laser MBE (CLMBE) method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal ions. The solubility behavior of 3d ions was studied from the viewpoints of ionic radius and valence state. Transmission spectra were classified into four groups with respect to the absorption edge shifts and d-d electron transitions. Mn2+ and Co2+ ions show very high solubility limits among all the 3d ion species and have high spin electron configurations in ZnO matrix. Such a high throughput synthesis tool as CLMBE is shown to be a powerful tool for exploring novel functionality of thin film materials.

AB - Combinatorial laser MBE (CLMBE) method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal ions. The solubility behavior of 3d ions was studied from the viewpoints of ionic radius and valence state. Transmission spectra were classified into four groups with respect to the absorption edge shifts and d-d electron transitions. Mn2+ and Co2+ ions show very high solubility limits among all the 3d ion species and have high spin electron configurations in ZnO matrix. Such a high throughput synthesis tool as CLMBE is shown to be a powerful tool for exploring novel functionality of thin film materials.

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U2 - 10.1016/S0022-0248(00)00058-0

DO - 10.1016/S0022-0248(00)00058-0

M3 - Conference article

AN - SCOPUS:0033701538

VL - 214

SP - 55

EP - 58

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

T2 - The 9th International Conference on II-VI Compounds

Y2 - 1 November 1999 through 5 November 1999

ER -

Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films

Abstract

ASJC Scopus subject areas

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