Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films

Zhengwu W. Jin, M. Murakami, T. Fukumura, Y. Matsumoto, A. Ohtomo, M. Kawasaki, H. Koinuma

Research output: Contribution to journalConference articlepeer-review

113 Citations (Scopus)


Combinatorial laser MBE (CLMBE) method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal ions. The solubility behavior of 3d ions was studied from the viewpoints of ionic radius and valence state. Transmission spectra were classified into four groups with respect to the absorption edge shifts and d-d electron transitions. Mn2+ and Co2+ ions show very high solubility limits among all the 3d ion species and have high spin electron configurations in ZnO matrix. Such a high throughput synthesis tool as CLMBE is shown to be a powerful tool for exploring novel functionality of thin film materials.

Original languageEnglish
Pages (from-to)55-58
Number of pages4
JournalJournal of Crystal Growth
Publication statusPublished - 2000 Jun 2
Externally publishedYes
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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