TY - JOUR
T1 - Combinatorial investigation of ZrO2-based dielectric materials for dynamic random-access memory capacitors
AU - Kiyota, Yuji
AU - Itaka, Kenji
AU - Iwashita, Yuta
AU - Adachi, Tetsuya
AU - Chikyow, Toyohiro
AU - Ogura, Atsushi
PY - 2011/6/1
Y1 - 2011/6/1
N2 - We investigated zirconia (ZrO2)-based material libraries in search of new dielectric materials for dynamic random-access memory (DRAM) by combinatorial-pulsed laser deposition (combi-PLD). We found that the substitution of yttrium (Y) to Zr sites in the ZrO2 system suppressed the leakage current effectively. The metal-insulator-metal (MIM) capacitor property of this system showed a leakage current density of less than 5 × 10-7A/cm2 and the dielectric constant was 20. Moreover, the addition of titanium (Ti) or tantalum (Ta) to this system caused the dielectric constant to increase to ∼25 within the allowed leakage level of 5 × 10-7A/cm2. Therefore, Zr-Y-Ti-O and Zr-Y-Ta-O systems have good potentials for use as new materials with high dielectric constants of DRAM capacitors instead of silicon dioxides (SiO2).
AB - We investigated zirconia (ZrO2)-based material libraries in search of new dielectric materials for dynamic random-access memory (DRAM) by combinatorial-pulsed laser deposition (combi-PLD). We found that the substitution of yttrium (Y) to Zr sites in the ZrO2 system suppressed the leakage current effectively. The metal-insulator-metal (MIM) capacitor property of this system showed a leakage current density of less than 5 × 10-7A/cm2 and the dielectric constant was 20. Moreover, the addition of titanium (Ti) or tantalum (Ta) to this system caused the dielectric constant to increase to ∼25 within the allowed leakage level of 5 × 10-7A/cm2. Therefore, Zr-Y-Ti-O and Zr-Y-Ta-O systems have good potentials for use as new materials with high dielectric constants of DRAM capacitors instead of silicon dioxides (SiO2).
UR - http://www.scopus.com/inward/record.url?scp=79959475083&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959475083&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.06GH12
DO - 10.1143/JJAP.50.06GH12
M3 - Article
AN - SCOPUS:79959475083
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 PART 2
M1 - 06GH12
ER -