Combinatorial investigation of ZrO2-based dielectric materials for dynamic random-access memory capacitors

Yuji Kiyota, Kenji Itaka, Yuta Iwashita, Tetsuya Adachi, Toyohiro Chikyow, Atsushi Ogura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated zirconia (ZrO2)-based material libraries in search of new dielectric materials for dynamic random-access memory (DRAM) by combinatorial-pulsed laser deposition (combi-PLD). We found that the substitution of yttrium (Y) to Zr sites in the ZrO2 system suppressed the leakage current effectively. The metal-insulator-metal (MIM) capacitor property of this system showed a leakage current density of less than 5 × 10-7A/cm2 and the dielectric constant was 20. Moreover, the addition of titanium (Ti) or tantalum (Ta) to this system caused the dielectric constant to increase to ∼25 within the allowed leakage level of 5 × 10-7A/cm2. Therefore, Zr-Y-Ti-O and Zr-Y-Ta-O systems have good potentials for use as new materials with high dielectric constants of DRAM capacitors instead of silicon dioxides (SiO2).

Original languageEnglish
Article number06GH12
JournalJapanese journal of applied physics
Volume50
Issue number6 PART 2
DOIs
Publication statusPublished - 2011 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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