Combinatorial investigation of ZrO2-based dielectric materials for DRAM capacitors

Y. Kiyota, Y. Iwashita, K. Itaka, T. Adachi, T. Chikyow, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated ZrO2-based new dielectric materials for random access memory by pulsed laser deposition (combi-PLD). We found that substitution of yttrium (Y) to ZrO2 system suppressed the leakage current effectively. MIM capacitor property of the promising composition candidates found in this system showed leakage current density less than 5×10 -7 A/cm2 and the dielectric constant was 20. In addition, substitution of titanium (Ti) and tantalum (Ta) caused the dielectric constant up to ∼22 within the allowed leakage level as well as 5×10 -7 A/cm2. Zr-Y-Ti-O and Zr-Y-Ta-O system have a potential for high dielectric materials as a new material of DRAM capacitors instead of SiO2.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
PublisherElectrochemical Society Inc.
Pages339-346
Number of pages8
Edition3
ISBN (Electronic)9781607681724
ISBN (Print)9781566778220
DOIs
Publication statusPublished - 2010
Externally publishedYes

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Combinatorial investigation of ZrO2-based dielectric materials for DRAM capacitors'. Together they form a unique fingerprint.

Cite this