Combinatorial investigation of ZrO2-based dielectric materials for DRAM capacitors

Y. Kiyota, Y. Iwashita, K. Itaka, T. Adachi, T. Chikyow, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated ZrO2-based new dielectric materials for random access memory by pulsed laser deposition (combi-PLD). We found that substitution of yttrium (Y) to ZrO2 system suppressed the leakage current effectively. MIM capacitor property of the promising composition candidates found in this system showed leakage current density less than 5×10 -7 A/cm2 and the dielectric constant was 20. In addition, substitution of titanium (Ti) and tantalum (Ta) caused the dielectric constant up to ∼22 within the allowed leakage level as well as 5×10 -7 A/cm2. Zr-Y-Ti-O and Zr-Y-Ta-O system have a potential for high dielectric materials as a new material of DRAM capacitors instead of SiO2.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
Pages339-346
Number of pages8
Edition3
DOIs
Publication statusPublished - 2010 Dec 1
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 112010 Oct 15

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
Country/TerritoryUnited States
CityLas Vegas, NV
Period10/10/1110/10/15

ASJC Scopus subject areas

  • Engineering(all)

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