Combinatorial exploration of flux material for Bi 4 Ti 3 O 12 single crystal film growth

R. Takahashi, Y. Yonezawa, M. Ohtani, M. Kawasaki, Y. Matsumoto, H. Koinuma

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)

Abstract

The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi 4 Ti 3 O 12 single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi 2 O 3 and Bi 4 Ti 3 O 12 ) and an impurity flux (VO x , WO x , CuO x , BiPO x , BaO, MoO x ) were fabricated on the SrTiO 3 (0 0 1) substrates. Then, stoichiometric Bi 4 Ti 3 O 12 was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi 2 O 3 , for Bi 4 Ti 3 O 12 single crystal film.

Original languageEnglish
Pages (from-to)2477-2481
Number of pages5
JournalApplied Surface Science
Volume252
Issue number7
DOIs
Publication statusPublished - 2006 Jan 21
Externally publishedYes
EventProceedings of the Third Japan-US Workshop on Combinatorial Material Science and Technology CMST-e SI -
Duration: 2004 Dec 72004 Dec 10

Keywords

  • Bi Ti O
  • Combinatorial chemistry
  • Flux-mediated epitaxy
  • Oxide thin film
  • Pulsed laser deposition

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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