Collective tunneling model between two-dimensional electron gas to Si-Nano Dot

Masakazu Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, K. Makihara, M. Ikeda, S. Miyazaki, Y. Shigeta, Tetsuo Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We study the temperature dependence of electron injection voltage in Si-Nano-Dot (Si-NDs) Floating Gate MOS capacitor by using the collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the temperature dependence by numerical calculation, which emulate the experiment in this system, and we obtained a new insight into the origin of the temperature dependence. We have revealed that the collective tunneling model can reproduce the temperature dependence of electron tunneling.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages295-296
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

Keywords

  • Collective Motion of Electron
  • Electron Dynamics
  • Quantum Dot
  • Si-Nano Dot
  • Tunneling

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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