Collective electron tunneling model in Si-Nano dot floating gate MOS structure

Masakazu Muraguchi; Yoko Sakurai; Yukihiro Takada; Yasuteru Shigeta; Mitsuhisa Ikeda; Katsunori Makihara; Seiichi Miyazaki; Shintaro Nomura; Kenji Shiraishi; Tetsuo Endoh

doi:10.4028/www.scientific.net/KEM.470.48

Collective electron tunneling model in Si-Nano dot floating gate MOS structure

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Yasuteru Shigeta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh

ENG - Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the sweep speed dependence of electron injection energy with a numerical calculation based on our collective tunneling model, that we developed to emulate the experiment in this system, and obtained a new insight into the origin of sweep speed dependence. We revealed that our model can reproduce the sweep speed dependence of electron tunneling. This insight is useful for designing future nano-electronic devices.

Original language	English
Title of host publication	Technology Evolution for Silicon Nano-Electronics
Publisher	Trans Tech Publications Ltd
Pages	48-53
Number of pages	6
ISBN (Print)	9783037850510
DOIs	https://doi.org/10.4028/www.scientific.net/KEM.470.48
Publication status	Published - 2011

Publication series

Name	Key Engineering Materials
Volume	470
ISSN (Print)	1013-9826
ISSN (Electronic)	1662-9795

Keywords

Electron dynamics
Quantum dot
Si-Nano Dot
Si-Nano Dot type floating gate MOS capacitor
Tunneling

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/KEM.470.48

Fingerprint Dive into the research topics of 'Collective electron tunneling model in Si-Nano dot floating gate MOS structure'. Together they form a unique fingerprint.

Cite this

Muraguchi, M., Sakurai, Y., Takada, Y., Shigeta, Y., Ikeda, M., Makihara, K., Miyazaki, S., Nomura, S., Shiraishi, K., & Endoh, T. (2011). Collective electron tunneling model in Si-Nano dot floating gate MOS structure. In Technology Evolution for Silicon Nano-Electronics (pp. 48-53). (Key Engineering Materials; Vol. 470). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.470.48

Collective electron tunneling model in Si-Nano dot floating gate MOS structure. / Muraguchi, Masakazu; Sakurai, Yoko; Takada, Yukihiro; Shigeta, Yasuteru; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi; Nomura, Shintaro; Shiraishi, Kenji; Endoh, Tetsuo.

Technology Evolution for Silicon Nano-Electronics. Trans Tech Publications Ltd, 2011. p. 48-53 (Key Engineering Materials; Vol. 470).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Muraguchi, M, Sakurai, Y, Takada, Y, Shigeta, Y, Ikeda, M, Makihara, K, Miyazaki, S, Nomura, S, Shiraishi, K & Endoh, T 2011, Collective electron tunneling model in Si-Nano dot floating gate MOS structure. in Technology Evolution for Silicon Nano-Electronics. Key Engineering Materials, vol. 470, Trans Tech Publications Ltd, pp. 48-53. https://doi.org/10.4028/www.scientific.net/KEM.470.48

Muraguchi, Masakazu ; Sakurai, Yoko ; Takada, Yukihiro ; Shigeta, Yasuteru ; Ikeda, Mitsuhisa ; Makihara, Katsunori ; Miyazaki, Seiichi ; Nomura, Shintaro ; Shiraishi, Kenji ; Endoh, Tetsuo. / Collective electron tunneling model in Si-Nano dot floating gate MOS structure. Technology Evolution for Silicon Nano-Electronics. Trans Tech Publications Ltd, 2011. pp. 48-53 (Key Engineering Materials).

@inproceedings{5313c245a76b44b495a48a04bff36cce,

title = "Collective electron tunneling model in Si-Nano dot floating gate MOS structure",

abstract = "We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the sweep speed dependence of electron injection energy with a numerical calculation based on our collective tunneling model, that we developed to emulate the experiment in this system, and obtained a new insight into the origin of sweep speed dependence. We revealed that our model can reproduce the sweep speed dependence of electron tunneling. This insight is useful for designing future nano-electronic devices.",

keywords = "Electron dynamics, Quantum dot, Si-Nano Dot, Si-Nano Dot type floating gate MOS capacitor, Tunneling",

author = "Masakazu Muraguchi and Yoko Sakurai and Yukihiro Takada and Yasuteru Shigeta and Mitsuhisa Ikeda and Katsunori Makihara and Seiichi Miyazaki and Shintaro Nomura and Kenji Shiraishi and Tetsuo Endoh",

year = "2011",

doi = "10.4028/www.scientific.net/KEM.470.48",

language = "English",

isbn = "9783037850510",

series = "Key Engineering Materials",

publisher = "Trans Tech Publications Ltd",

pages = "48--53",

booktitle = "Technology Evolution for Silicon Nano-Electronics",

}

TY - GEN

T1 - Collective electron tunneling model in Si-Nano dot floating gate MOS structure

AU - Muraguchi, Masakazu

AU - Sakurai, Yoko

AU - Takada, Yukihiro

AU - Shigeta, Yasuteru

AU - Ikeda, Mitsuhisa

AU - Makihara, Katsunori

AU - Miyazaki, Seiichi

AU - Nomura, Shintaro

AU - Shiraishi, Kenji

AU - Endoh, Tetsuo

PY - 2011

Y1 - 2011

N2 - We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the sweep speed dependence of electron injection energy with a numerical calculation based on our collective tunneling model, that we developed to emulate the experiment in this system, and obtained a new insight into the origin of sweep speed dependence. We revealed that our model can reproduce the sweep speed dependence of electron tunneling. This insight is useful for designing future nano-electronic devices.

AB - We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the sweep speed dependence of electron injection energy with a numerical calculation based on our collective tunneling model, that we developed to emulate the experiment in this system, and obtained a new insight into the origin of sweep speed dependence. We revealed that our model can reproduce the sweep speed dependence of electron tunneling. This insight is useful for designing future nano-electronic devices.

KW - Electron dynamics

KW - Quantum dot

KW - Si-Nano Dot

KW - Si-Nano Dot type floating gate MOS capacitor

KW - Tunneling

UR - http://www.scopus.com/inward/record.url?scp=79952744461&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952744461&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/KEM.470.48

DO - 10.4028/www.scientific.net/KEM.470.48

M3 - Conference contribution

AN - SCOPUS:79952744461

SN - 9783037850510

T3 - Key Engineering Materials

SP - 48

EP - 53

BT - Technology Evolution for Silicon Nano-Electronics

PB - Trans Tech Publications Ltd

ER -