@inproceedings{5313c245a76b44b495a48a04bff36cce,
title = "Collective electron tunneling model in Si-Nano dot floating gate MOS structure",
abstract = "We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the sweep speed dependence of electron injection energy with a numerical calculation based on our collective tunneling model, that we developed to emulate the experiment in this system, and obtained a new insight into the origin of sweep speed dependence. We revealed that our model can reproduce the sweep speed dependence of electron tunneling. This insight is useful for designing future nano-electronic devices.",
keywords = "Electron dynamics, Quantum dot, Si-Nano Dot, Si-Nano Dot type floating gate MOS capacitor, Tunneling",
author = "Masakazu Muraguchi and Yoko Sakurai and Yukihiro Takada and Yasuteru Shigeta and Mitsuhisa Ikeda and Katsunori Makihara and Seiichi Miyazaki and Shintaro Nomura and Kenji Shiraishi and Tetsuo Endoh",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2011",
doi = "10.4028/www.scientific.net/KEM.470.48",
language = "English",
isbn = "9783037850510",
series = "Key Engineering Materials",
publisher = "Trans Tech Publications Ltd",
pages = "48--53",
booktitle = "Technology Evolution for Silicon Nano-Electronics",
}