Collective electron tunneling model in Si-Nano dot floating gate MOS structure

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Yasuteru Shigeta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the sweep speed dependence of electron injection energy with a numerical calculation based on our collective tunneling model, that we developed to emulate the experiment in this system, and obtained a new insight into the origin of sweep speed dependence. We revealed that our model can reproduce the sweep speed dependence of electron tunneling. This insight is useful for designing future nano-electronic devices.

Original languageEnglish
Title of host publicationTechnology Evolution for Silicon Nano-Electronics
PublisherTrans Tech Publications Ltd
Pages48-53
Number of pages6
ISBN (Print)9783037850510
DOIs
Publication statusPublished - 2011

Publication series

NameKey Engineering Materials
Volume470
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Keywords

  • Electron dynamics
  • Quantum dot
  • Si-Nano Dot
  • Si-Nano Dot type floating gate MOS capacitor
  • Tunneling

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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