Collateral evidence for an excellent radiative performance of Al xGa1-xN alloy films of high AlN mole fractions

S. F. Chichibu; K. Hazu; T. Onuma; A. Uedono

doi:10.1063/1.3615681

Collateral evidence for an excellent radiative performance of Al _xGa_1-xN alloy films of high AlN mole fractions

S. F. Chichibu, K. Hazu, T. Onuma, A. Uedono

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Abstract

Recombination dynamics for the deep-ultraviolet (DUV) near-band-edge emission of Al_xGa_1-xN epilayers of high AlN mole fractions (x) are studied using time-resolved spectroscopy. Their low-temperature radiative lifetime (_R) is longer than that for the epilayers of low-x Al_xGa_1-xN, AlN, or GaN due to the contribution of bound and localized tail-states. However, _R shows little change with temperature rise, and the value is a few ns at 300 K. The results essentially indicate an excellent radiative performance of Al _xGa_1-xN alloys of high x, although the luminescence efficiency of Al_xGa_1-xN DUV light-emitting-diodes reported so far is limited by the short nonradiative lifetime.

Original language	English
Article number	051902
Journal	Applied Physics Letters
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.3615681
Publication status	Published - 2011 Aug 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3615681

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title = "Collateral evidence for an excellent radiative performance of Al xGa1-xN alloy films of high AlN mole fractions",

abstract = "Recombination dynamics for the deep-ultraviolet (DUV) near-band-edge emission of AlxGa1-xN epilayers of high AlN mole fractions (x) are studied using time-resolved spectroscopy. Their low-temperature radiative lifetime (R) is longer than that for the epilayers of low-x AlxGa1-xN, AlN, or GaN due to the contribution of bound and localized tail-states. However, R shows little change with temperature rise, and the value is a few ns at 300 K. The results essentially indicate an excellent radiative performance of Al xGa1-xN alloys of high x, although the luminescence efficiency of AlxGa1-xN DUV light-emitting-diodes reported so far is limited by the short nonradiative lifetime.",

author = "Chichibu, {S. F.} and K. Hazu and T. Onuma and A. Uedono",

note = "Funding Information: The authors thank Professor T. Sota and Dr. M. Tanaka for fruitful discussions. This work was supported in part by NEDO programs under METI, Grant-in-Aids for Scientific Research Nos. 23656206 and 18069001 under MEXT, Japan and AFOSR/AOARD Grant No. FA2386-11-1-4013 monitored by Dr. G. Jessen. ",

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T1 - Collateral evidence for an excellent radiative performance of Al xGa1-xN alloy films of high AlN mole fractions

AU - Chichibu, S. F.

AU - Hazu, K.

AU - Onuma, T.

AU - Uedono, A.

N1 - Funding Information: The authors thank Professor T. Sota and Dr. M. Tanaka for fruitful discussions. This work was supported in part by NEDO programs under METI, Grant-in-Aids for Scientific Research Nos. 23656206 and 18069001 under MEXT, Japan and AFOSR/AOARD Grant No. FA2386-11-1-4013 monitored by Dr. G. Jessen.

PY - 2011/8/1

Y1 - 2011/8/1

N2 - Recombination dynamics for the deep-ultraviolet (DUV) near-band-edge emission of AlxGa1-xN epilayers of high AlN mole fractions (x) are studied using time-resolved spectroscopy. Their low-temperature radiative lifetime (R) is longer than that for the epilayers of low-x AlxGa1-xN, AlN, or GaN due to the contribution of bound and localized tail-states. However, R shows little change with temperature rise, and the value is a few ns at 300 K. The results essentially indicate an excellent radiative performance of Al xGa1-xN alloys of high x, although the luminescence efficiency of AlxGa1-xN DUV light-emitting-diodes reported so far is limited by the short nonradiative lifetime.

AB - Recombination dynamics for the deep-ultraviolet (DUV) near-band-edge emission of AlxGa1-xN epilayers of high AlN mole fractions (x) are studied using time-resolved spectroscopy. Their low-temperature radiative lifetime (R) is longer than that for the epilayers of low-x AlxGa1-xN, AlN, or GaN due to the contribution of bound and localized tail-states. However, R shows little change with temperature rise, and the value is a few ns at 300 K. The results essentially indicate an excellent radiative performance of Al xGa1-xN alloys of high x, although the luminescence efficiency of AlxGa1-xN DUV light-emitting-diodes reported so far is limited by the short nonradiative lifetime.

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Collateral evidence for an excellent radiative performance of Al _xGa_1-xN alloy films of high AlN mole fractions

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