Cold cathode array coated with cubic boron nitride

Masanori Kobayashi, Hidetoshi Miyashita, Takahito Ono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A thin film of boron nitride is synthesized on a Si substrate using BCl3 and NH3 as source gases, by thermal chemical vapor deposition. Cubic boron nitride (c-BN) is preferentially synthesized using a Fe thin film. The c-BN film exhibits negative electron affinity. A gated silicon field emitter array coated with a c-BN thin film for multi electron beam lithography is developed. Large emission current can be achieved in BN-coated Si emitter.

Original languageEnglish
Title of host publication2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013
DOIs
Publication statusPublished - 2013 Dec 9
Event2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013 - Roanoke, VA, United States
Duration: 2013 Jul 82013 Jul 12

Publication series

Name2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

Other

Other2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013
CountryUnited States
CityRoanoke, VA
Period13/7/813/7/12

Keywords

  • c-BN
  • chemical vapor deposition
  • cubic boron nitride
  • field emission
  • multi electron beam lithography

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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