Cointegration of high-performance tied-gate three-terminal FinFETs and variable threshold-voltage independent-gate four-terminal FinFETs with asymmetric gate-oxide thicknesses

Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Meishoku Masahara, Shin Ichi O'uchi, Kenichi Ishii, Hiromi Yamauchi, Junichi Tsukada, Yuki Ishikawa, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)

Abstract

Cointegration of titanium nitride (TiN)-gate high-performance tied-gate three-terminal FinFETs with symmetric gate-oxide thicknesses (tox1= tox2= 1.7 nm) and variable threshold-voltage Vth independent-gate four-terminal (4T) FinFETs with asymmetric gate-oxide thicknesses (Tox1 = 1.7 nm for the driving-gate-oxide, and (tox2 = 3.4 or 7.0 nm for the control-gate-oxide) has been successfully developed using conventional reactive sputtering, two-step Si-fin and gate-oxide formation, and resist etch-back processes. A significantly improved subthreshold slope and an extremely low OFF-state current Ioff are experimentally confirmed in the asymmetric gate-oxide thickness 4T FinFETs by increasing the control-gate-oxide thickness to twice or more the driving-gate-oxide thickness. The developed techniques are attractive for high-performance and low-power FinFET very large-scale integration circuits.

Original languageEnglish
Pages (from-to)517-519
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number6
DOIs
Publication statusPublished - 2007 Jun 1
Externally publishedYes

Keywords

  • Asymmetric gate-oxide thicknesses
  • Cointegration
  • Double-gate MOSFET
  • FinFET
  • Independent-gate FinFET
  • Threshold-voltage control
  • TiN gate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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