Abstract
1-μm-thick Cu thin lines with adjacent connections, which simulate via structures in large-scale integration circuits, were fabricated on Si 3N4 membranes by both electron-beam evaporation and a focused ion beam for coherent x-ray diffraction measurements. A direct current was applied to a Cu thin line to prepare an electromigration sample. In the scanning electron microscope image of the electromigration sample, a roughness of a few hundred nanometers was observed on the surface around the via structures. Coherent x-ray diffraction patterns of both the thin line and electromigration samples were measured using synchrotron x-rays at SPring-8. Characteristic diffraction patterns resulting from both the shape of the Cu thin lines and the defects around the via structures formed by the application of the current were observed.
Original language | English |
---|---|
Pages (from-to) | 1046-1049 |
Number of pages | 4 |
Journal | Surface and Interface Analysis |
Volume | 40 |
Issue number | 6-7 |
DOIs | |
Publication status | Published - 2008 Jun |
Externally published | Yes |
Keywords
- Coherent x-ray diffraction
- Cu thin line
- Electromigration
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry