Coherent x-ray diffraction measurements of Cu thin lines

Yukio Takahashi, Hayato Furukawa, Hideto Kubo, Kazuto Yamauchi, Yoshinori Nishino, Tetsuya Ishikawa, Eiichiro Matsubara

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

1-μm-thick Cu thin lines with adjacent connections, which simulate via structures in large-scale integration circuits, were fabricated on Si 3N4 membranes by both electron-beam evaporation and a focused ion beam for coherent x-ray diffraction measurements. A direct current was applied to a Cu thin line to prepare an electromigration sample. In the scanning electron microscope image of the electromigration sample, a roughness of a few hundred nanometers was observed on the surface around the via structures. Coherent x-ray diffraction patterns of both the thin line and electromigration samples were measured using synchrotron x-rays at SPring-8. Characteristic diffraction patterns resulting from both the shape of the Cu thin lines and the defects around the via structures formed by the application of the current were observed.

Original languageEnglish
Pages (from-to)1046-1049
Number of pages4
JournalSurface and Interface Analysis
Volume40
Issue number6-7
DOIs
Publication statusPublished - 2008 Jun 1
Externally publishedYes

Keywords

  • Coherent x-ray diffraction
  • Cu thin line
  • Electromigration

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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