Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature

Stephane Boubanga-Tombet, Taiichi Otsuji, Frederic Teppe, Jeremy Torres, Wojciech Knap

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. Our results shows that properly excit- ing nanotransistors can pave the way for new class of coherent and easily tunable THz sources.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2011
Publication statusPublished - 2011 Dec 1
EventCLEO: Science and Innovations, CLEO_SI 2011 - Baltimore, MD, United States
Duration: 2011 May 12011 May 6

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherCLEO: Science and Innovations, CLEO_SI 2011
CountryUnited States
CityBaltimore, MD
Period11/5/111/5/6

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Boubanga-Tombet, S., Otsuji, T., Teppe, F., Torres, J., & Knap, W. (2011). Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature. In CLEO: Science and Innovations, CLEO_SI 2011 (Optics InfoBase Conference Papers).