CoFeB thickness dependence of thermal stability factor in CoFeB/MgO perpendicular magnetic tunnel junctions

H. Sato, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)

Abstract

Thermal stability factor Δ of the recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, Δ is virtually independent of the junction sizes of 48-81 nm in diameter. The values of Δ increase linearly as the recording layer thickness increases. The slope of the linear fit is explained well by a model based on nucleation-type magnetization reversal.

Original languageEnglish
Article number6189858
JournalIEEE Magnetics Letters
Volume3
DOIs
Publication statusPublished - 2012

Keywords

  • Spin electronics
  • magnetic random access memory
  • magnetic tunnel junctions (MTJs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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