CoFeB inserted perpendicular magnetic tunnel junctions with CoFe/Pd multilayers for high tunnel magnetoresistance ratio

Kotaro Mizunuma, Shoji Ikeda, Hiroyuki Yamamoto, Hua Dong Gan, Katsuya Miura, Haruhiro Hasegawa, Jun Hayakawa, Kenchi Ito, Fumihiro Matsukura, Hideo Ohno

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11 Citations (Scopus)

Abstract

The effect of Co20Fe60B20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co90Fe10/Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB layer, reached 43% at 1.77W/cm 2 in MTJs with a 1.8-nm-thick CoFeB layer inserted on both sides of the MgO barrier. With increasing CoFeB layer thickness, the optimal annealing temperature (Ta) realizing the maximum TMR ratio increased along with the TMR ratio. The MTJs with 3.0-nm-thick CoFeB deposited at 1.77W/cm 2 showed a TMR ratio of 91% at Ta % 250 °C, where the perpendicular magnetic anisotropy is maintained.

Original languageEnglish
Article number04DM04
JournalJapanese journal of applied physics
Volume49
Issue number4 PART 2
DOIs
Publication statusPublished - 2010 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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