TY - JOUR
T1 - CoFeB inserted perpendicular magnetic tunnel junctions with CoFe/Pd multilayers for high tunnel magnetoresistance ratio
AU - Mizunuma, Kotaro
AU - Ikeda, Shoji
AU - Yamamoto, Hiroyuki
AU - Gan, Hua Dong
AU - Miura, Katsuya
AU - Hasegawa, Haruhiro
AU - Hayakawa, Jun
AU - Ito, Kenchi
AU - Matsukura, Fumihiro
AU - Ohno, Hideo
PY - 2010/4
Y1 - 2010/4
N2 - The effect of Co20Fe60B20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co90Fe10/Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB layer, reached 43% at 1.77W/cm 2 in MTJs with a 1.8-nm-thick CoFeB layer inserted on both sides of the MgO barrier. With increasing CoFeB layer thickness, the optimal annealing temperature (Ta) realizing the maximum TMR ratio increased along with the TMR ratio. The MTJs with 3.0-nm-thick CoFeB deposited at 1.77W/cm 2 showed a TMR ratio of 91% at Ta % 250 °C, where the perpendicular magnetic anisotropy is maintained.
AB - The effect of Co20Fe60B20 insertion on tunnel magnetoresistance (TMR) properties of MgO barrier magnetic tunnel junctions (MTJs) was studied with Co90Fe10/Pd multilayer electrodes showing perpendicular anisotropy. The TMR ratio, which depended on the sputtering power density of the CoFeB layer, reached 43% at 1.77W/cm 2 in MTJs with a 1.8-nm-thick CoFeB layer inserted on both sides of the MgO barrier. With increasing CoFeB layer thickness, the optimal annealing temperature (Ta) realizing the maximum TMR ratio increased along with the TMR ratio. The MTJs with 3.0-nm-thick CoFeB deposited at 1.77W/cm 2 showed a TMR ratio of 91% at Ta % 250 °C, where the perpendicular magnetic anisotropy is maintained.
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U2 - 10.1143/JJAP.49.04DM04
DO - 10.1143/JJAP.49.04DM04
M3 - Article
AN - SCOPUS:77952720293
SN - 0021-4922
VL - 49
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 PART 2
M1 - 04DM04
ER -