Coercivity change in an FePt thin layer in a Hall device by voltage application

Takeshi Seki, Makoto Kohda, Junsaku Nitta, Koki Takanashi

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92 Citations (Scopus)


The coercivity (Hc) of a perpendicularly magnetized FePt layer was modulated by applying the voltage (Vapp) to a Hall device through MgO and Al-O insulating layers. A change in ∼40 Oe in Hc was observed by changing Vapp from -13 to 13 V. From the quantitative analysis of the voltage effect on Hc, the change in the anisotropy energy by voltage application was evaluated to be 18.6 fJ/V m, which was of the same order as the theoretical prediction. The role of the MgO layer for the voltage effect was also discussed.

Original languageEnglish
Article number212505
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2011 May 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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