TY - JOUR
T1 - Cobalt Oxide (CoOx) as an Efficient Hole-Extracting Layer for High-Performance Inverted Planar Perovskite Solar Cells
AU - Shalan, Ahmed Esmail
AU - Oshikiri, Tomoya
AU - Narra, Sudhakar
AU - Elshanawany, Mahmoud M.
AU - Ueno, Kosei
AU - Wu, Hui Ping
AU - Nakamura, Keisuke
AU - Shi, Xu
AU - Diau, Eric Wei Guang
AU - Misawa, Hiroaki
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/12/14
Y1 - 2016/12/14
N2 - CoOx is a promising hole-extracting layer (HEL) for inverted planar perovskite solar cells with device configuration ITO/CoOx/CH3NH3PbI3/PCBM/Ag. The devices fabricated according to a simple solution procedure showed the best photovoltaic performance attaining power conversion efficiency (PCE) of 14.5% under AM 1.5 G 1 sun irradiation, which is significantly superior to those of materials fabricated with a traditional HEL such as PEDOT:PSS (12.2%), NiOx (10.2%), and CuOx (9.4%) under the same experimental conditions. We characterized the chemical compositions with XPS, crystal structures with XRD, and film morphology with SEM/AFM techniques. Photoluminescence (PL) spectra and the corresponding PL decays for perovskite deposited on varied HEL films were recorded to obtain the hole-extracting characteristics, for which the hole-extracting times show the order CoOx (2.8 ns) < PEDOT:PSS (17.5 ns) < NiOx (22.8 ns) < CuOx (208.5 ns), consistent with the trend of their photovoltaic performances. The reproducibility and enduring stability of those devices were examined to show the outstanding long-term stability of the devices made of metal oxide HEL, for which the CoOx device retained PCE ≈ 12% for over 1000 h.
AB - CoOx is a promising hole-extracting layer (HEL) for inverted planar perovskite solar cells with device configuration ITO/CoOx/CH3NH3PbI3/PCBM/Ag. The devices fabricated according to a simple solution procedure showed the best photovoltaic performance attaining power conversion efficiency (PCE) of 14.5% under AM 1.5 G 1 sun irradiation, which is significantly superior to those of materials fabricated with a traditional HEL such as PEDOT:PSS (12.2%), NiOx (10.2%), and CuOx (9.4%) under the same experimental conditions. We characterized the chemical compositions with XPS, crystal structures with XRD, and film morphology with SEM/AFM techniques. Photoluminescence (PL) spectra and the corresponding PL decays for perovskite deposited on varied HEL films were recorded to obtain the hole-extracting characteristics, for which the hole-extracting times show the order CoOx (2.8 ns) < PEDOT:PSS (17.5 ns) < NiOx (22.8 ns) < CuOx (208.5 ns), consistent with the trend of their photovoltaic performances. The reproducibility and enduring stability of those devices were examined to show the outstanding long-term stability of the devices made of metal oxide HEL, for which the CoOx device retained PCE ≈ 12% for over 1000 h.
KW - cobalt oxide
KW - hole-extraction layer
KW - perovskite solar cell
KW - photoluminescence
KW - photovoltaic devices
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U2 - 10.1021/acsami.6b10803
DO - 10.1021/acsami.6b10803
M3 - Article
AN - SCOPUS:85006287865
SN - 1944-8244
VL - 8
SP - 33592
EP - 33600
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 49
ER -