Co and CoTix for contact plug and barrier layer in integrated circuits

Maryamsadat Hosseini, Daisuke Ando, Yuji Sutou, Junichi Koike

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Continuous transistor scaling in integrated circuits brings about a significant increase of electrical resistance in the source/drain area. To alleviate the problem, this paper proposes Co/CoTix to replace conventional contact plug/barrier materials of W/TiN/Ti. Co and CoTix amorphous alloy layers were deposited on SiO2/p-Si. The 3 nm-thick amorphous CoTix layer promoted adhesion between Co and SiO2. The resistivity of the 150 nm-thick Co film on CoTix showed low film resistivity close to bulk Co value both in as-deposited and annealed conditions. The amorphous structure of the CoTix layer was maintained throughout annealing up to 500 °C. Capacitance-voltage measurement of Co/CoTix/SiO2/p-Si samples showed a good diffusion barrier property of the CoTix layer between Co and SiO2 after thermal stress as well as bias thermal stress. The obtained results indicated that Co/CoTix can be good candidate materials for contact plug and diffusion barrier in advanced integrated circuits.

Original languageEnglish
Pages (from-to)78-84
Number of pages7
JournalMicroelectronic Engineering
Volume189
DOIs
Publication statusPublished - 2018 Apr 5

Keywords

  • Cobalt
  • Contact plug
  • Diffusion barrier
  • Metal-oxide-semiconductor (MOS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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