CMP of GaN using sulfate radicals generated by metal catalyst

Chunli Zou, Guoshun Pan, Li Xu, Xiaolei Shi, Yuyu Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A method for preparing atomically smooth gallium nitride (GaN) surface with high material removal rate that involves chemical mechanical polishing with sulfate radical (SO4-) oxidizer and Fe2+ activator in slurry is presented. The results indicate that complexing agent with Fe2+ activator is the key point to obtain atomically smooth GaN surface and higher removal rate of GaN. Atomic force microscope (AFM) shows that the average surface roughness (Ra) is 0.0601nm.

Original languageEnglish
Title of host publicationICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages242-245
Number of pages4
ISBN (Electronic)9781479955565
DOIs
Publication statusPublished - 2015 Jan 20
Event11th International Conference on Planarization/CMP Technology, ICPT 2014 - Kobe, Japan
Duration: 2014 Nov 192014 Nov 21

Publication series

NameICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014

Other

Other11th International Conference on Planarization/CMP Technology, ICPT 2014
CountryJapan
CityKobe
Period14/11/1914/11/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

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