CMOS/BiCMOS power amplifier technology trend in Japan

N. Suematsu, S. Shinjo

Research output: Contribution to conferencePaper

4 Citations (Scopus)

Abstract

Aiming for 2-5GHz band transceiver system on a chip, the integration of RF section has been developed by using conventional CMOS/BiCMOS (SiGeCMOS) process. The attempts to integrate power amplifiers (PA's) have been successful for low transmit power system such as Buletooth, but these attempts are very limited due to the poor power handling capability of FET's in CMOS and the distortion characteristics of BJT's(HBT's) in BiCMOS. From the point of view of a circuit designer, this paper reviews the recent research activities of CMOS/BiCMOS PA's in Japan, and also describes the details of (1) the feasibility study of PA's using conventional CMOS process, and (2) the circuitry trials of distortion reduction for BJT(HBT) PA's.

Original languageEnglish
Pages107-110
Number of pages4
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event23rd Annual GaAs IC Symposium 2001 - Baltimore, MD, United States
Duration: 2001 Oct 212001 Oct 24

Other

Other23rd Annual GaAs IC Symposium 2001
CountryUnited States
CityBaltimore, MD
Period01/10/2101/10/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Suematsu, N., & Shinjo, S. (2001). CMOS/BiCMOS power amplifier technology trend in Japan. 107-110. Paper presented at 23rd Annual GaAs IC Symposium 2001, Baltimore, MD, United States.