CMOS integration of dual work function phase controlled Ni FUSI with simultaneous silicidation of NMOS (NiSi) and PMOS (Ni-rich silicide) gates on HfSiON

A. Lauwers, A. Veloso, T. Hoffmann, M. J.H. Van Dal, C. Vrancken, S. Brus, S. Locorotondo, J. F. De Marneffe, B. Sijmus, S. Kubicek, T. Chiarella, M. A. Pawlak, K. Opsomer, M. Niwa, R. Mitsuhashi, K. G. Anil, H. Y. Yu, C. Demeurisse, R. Verbeeck, M. De PotterP. Absil, K. Maex, M. Jurczak, S. Biesemans, J. A. Kittl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We demonstrate for the first time CMOS integration of dual WF (work function) metal gates on HfSiON using Ni-phase controlled FUSI. The novel integration scheme that we demonstrate uses our optimized 2-step Ni FUSI process (1) for simultaneous full silicidation of nMOS and pMOS, achieving different Ni/Si ratios on nMOS and pMOS by reduction of the pMOS poly height through a selective and controlled poly etch back prior to gate silicidation. This novel integration scheme offers the advantages of 1) simplicity (same Ni deposition and silicidation process on nMOS and pMOS), 2) large process window for poly etch-back process (same pMOS characteristics for poly thickness variation of 50%), 3) WF and Vt tuning on HfSiON by phase control, with 4) scalable, linewidth independent suitable Vt's for nMOS (0.5 V) and pMOS (-0.3 V), and 5) solves process yield issues of Ni-rich silicides related to volume expansion, stress, filaments and voiding, resulting in a continuous silicide that is nicely confined between the sidewall spacers. Ring oscillator operation was also demonstrated.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages646-649
Number of pages4
Publication statusPublished - 2005 Dec 1
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 2005 Dec 52005 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period05/12/505/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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