Clustering process of point defects in GaP studied by transmission electron microscopy

Y. Ohno, S. Takeda, M. Hirata

Research output: Contribution to journalConference articlepeer-review

Abstract

It is found that Frank-loops of interstitial-type are formed uniformly in the irradiated area of GaP crystal by annealing at the temperature above 700 K after 200 keV-electron-irradiation. In-situ TEM observation shows that the loops grow as the annealing-time passes, and then each size of them reaches to a specific radius. On the other hand, the number density of loops is almost independent of the annealing-time, since most embryos of the loops are created uniformly in the early stage of annealing. As the annealing temperature rises, the loop-radius increases while the number density of loops decreases. The total number density of aggregated interstitial-atoms, which are contained in all the loops, is independent of the annealing temperature. The total number density only depends on the irradiation-conditions, and it increases quadratically with increasing electron-dose that the specimen receives. To explain the results, we have proposed a model that the loops are formed by thermal migration and clustering of the pairs of interstitial-atoms (Ga-P pair), which are created during electron-irradiation. From the analysis, the migration energy for the pair is estimated as 0.88 eV.

Original languageEnglish
Pages (from-to)1279-1284
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 3
DOIs
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 1995 Jul 231995 Jul 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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