Cluster-preforming-deposited amorphous WSin (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact

Naoya Okada, Noriyuki Uchida, Sinichi Ogawa, Kazuhiko Endo, Toshihiko Kanayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The insertion of an amorphous WSin (n = 12) film composed of W-atom-encapsulated Sin cage clusters is demonstrated to reduce the SBH to 0.32 eV at W/n-Si and to 0.51 eV at W/Ge/p-Si junctions, while significantly extending the estimated TDDB lifetime to > 10 years at 100 °C under 5 MV/cm stress for Cu MOS capacitors. This film was formed with an excellent contact hole coverage by using WF6 and SiH4 gas sources in a hot-wall thermal reactor. These film properties enable the direct Cu contact at S/D in CMOS.

Original languageEnglish
Title of host publication2017 IEEE International Electron Devices Meeting, IEDM 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22.5.1-22.5.4
ISBN (Electronic)9781538635599
DOIs
Publication statusPublished - 2018 Jan 23
Externally publishedYes
Event63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
Duration: 2017 Dec 22017 Dec 6

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other63rd IEEE International Electron Devices Meeting, IEDM 2017
CountryUnited States
CitySan Francisco
Period17/12/217/12/6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Okada, N., Uchida, N., Ogawa, S., Endo, K., & Kanayama, T. (2018). Cluster-preforming-deposited amorphous WSin (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact. In 2017 IEEE International Electron Devices Meeting, IEDM 2017 (pp. 22.5.1-22.5.4). (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2017.8268442