Climb of extended dislocations in silicon caused by oxygen precipitation

Kyoko Minowa, Ichiro Yonenaga, Koji Sumino

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Morphology of dislocations during climbing caused by excess interstitials associated with oxygen precipitation in Czochralskigrown silicon is investigated by means of weak beam electron microscopy. Dislocations induced by plastic deformation are extended in any stage of climbing. The climbing process of an extended dislocation in a diamond-type crystal is described with a model based on an idea originally presented by Thomson and Balluffi for a fcc crystal.

Original languageEnglish
Pages (from-to)164-170
Number of pages7
JournalMaterials Letters
Issue number5-7
Publication statusPublished - 1991 Jan 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Climb of extended dislocations in silicon caused by oxygen precipitation'. Together they form a unique fingerprint.

Cite this