Climb of dislocations induced by oxygen precipitation in silicon

K. Minowa, Ichiro Yonenaga, K. Sumino

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The characteristics of the climb process of glide dislocations caused by excess interstitials produced by oxygen precipitation in Czochralski-grown silicon were investigated by means of the weak beam TEM technique. Dislocations were observed to be extended in all stages of climbing. The climb process was interpreted with a model based on the idea originally proposed for FCC crystals by Thomson and Balluffi.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Inst of Physics Publ Ltd
Pages217-220
Number of pages4
Edition117
ISBN (Print)0854984062
Publication statusPublished - 1991 Dec 1
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: 1991 Mar 251991 Mar 28

Publication series

NameInstitute of Physics Conference Series
Number117
ISSN (Print)0373-0751

Other

OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period91/3/2591/3/28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Minowa, K., Yonenaga, I., & Sumino, K. (1991). Climb of dislocations induced by oxygen precipitation in silicon. In Institute of Physics Conference Series (117 ed., pp. 217-220). (Institute of Physics Conference Series; No. 117). Publ by Inst of Physics Publ Ltd.