Climb of dislocations in GaAs by irradiation

Ichiro Yonenaga, P. D. Brown, C. J. Humphreys

Research output: Contribution to journalArticle

2 Citations (Scopus)


Climb of dislocation dipoles within GaAs during electron beam irradiation has been observed by high resolution transmission electron microscopy. In particular, 90° Shockley partials of α- and β-type forming part of a faulted dipole climbed through absorption of interstitials, with the β-partial showing a greater extent of climb for the same conditions of irradiation. Dislocation climb initiated with the formation of perfect dislocation loops located on the partial dislocations.

Original languageEnglish
Pages (from-to)148-150
Number of pages3
JournalMaterials Science and Engineering A
Issue number1-2
Publication statusPublished - 1998 Sep 30


  • Climb
  • Dislocation
  • GaAs
  • High resolution transmission electron microscopy
  • Irradiation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Yonenaga, I., Brown, P. D., & Humphreys, C. J. (1998). Climb of dislocations in GaAs by irradiation. Materials Science and Engineering A, 253(1-2), 148-150.