Cleaved surfaces of high Tc films for making SNS structures

I. Takeuchi, J. S. Tsai, H. Tsuge, N. Matsukura, S. Miura, T. Yoshitake, Y. Kojima, S. Matsui

Research output: Contribution to journalConference articlepeer-review

Abstract

In exploring the feasibility of fabricating high Tc SNS Josephson junctions with well-defined and clean SN interfaces, we have cleaved epitaxial thin films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O of various crystal orientations in vacuum while the evaporation of a noble metal is taking place. Our samples had structures which allowed us to in situ form SNS junctions when the films were cleaved together with substrate with the area of the SN interfaces defined by the revealed cross-sectional edge surfaces of the films (typically 50μm2). Electrical measurements of the resulting junctions show that oxide/metal interfaces possess contact resistance in the order of 10-9 approximately 10+-8Ωcm2 which is at least two orders of magnitude larger than that of similarly made SN interfaces with metallic superconductors. The nature of this interface and the factors influencing and giving rise to the contact resistance are discussed.

Original languageEnglish
Pages (from-to)96-101
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1394
DOIs
Publication statusPublished - 1991
Externally publishedYes
EventProgress in High-Temperature Superconducting Transistors and Other Devices - Santa Clara, CA, USA
Duration: 1990 Oct 41990 Oct 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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