Clear difference between the chemical structure of SiO2/Si interfaces formed using oxygen radicals versus oxygen molecules

Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita, Tadahiro Ohmi, Takeo Hattori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radicals (OR) versus oxygen molecules (OM) are reported. Most of intermediate oxidation states of Si, so called suboxides, consisting of Si3+, Si2+, and Si1+ are localized at and near the SiO2/Si interfaces. The suboxides formed utilizing OM are located extremely close to the interfaces, while suboxides formed utilizing OR are located not only at the interface but also in the Si substrate. This implies the penetration of a part of OR into the Si substrate to form Si1+ and to relax the interfacial stress. Intermediate chemical bonding states of Si are formed in Si substrate closer to the interface as compared with those formed utilizing OM. This implies that the interfacial stress in the former is smaller than that in the latter.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages115-122
Number of pages8
Edition4
DOIs
Publication statusPublished - 2011 Aug 2
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 2011 May 12011 May 6

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
Country/TerritoryCanada
CityMontreal, QC
Period11/5/111/5/6

ASJC Scopus subject areas

  • Engineering(all)

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