Clear difference between the chemical structure of SiO2/Si interfaces formed using oxygen radicals versus oxygen molecules

Tomoyuki Suwa; Yuki Kumagai; Akinobu Teramoto; Takayuki Muro; Toyohiko Kinoshita; Tadahiro Ohmi; Takeo Hattori

doi:10.1149/1.3572279

Clear difference between the chemical structure of SiO₂/Si interfaces formed using oxygen radicals versus oxygen molecules

Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Takayuki Muro, Toyohiko Kinoshita, Tadahiro Ohmi, Takeo Hattori

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radicals (OR) versus oxygen molecules (OM) are reported. Most of intermediate oxidation states of Si, so called suboxides, consisting of Si³⁺, Si²⁺, and Si¹⁺ are localized at and near the SiO₂/Si interfaces. The suboxides formed utilizing OM are located extremely close to the interfaces, while suboxides formed utilizing OR are located not only at the interface but also in the Si substrate. This implies the penetration of a part of OR into the Si substrate to form Si¹⁺ and to relax the interfacial stress. Intermediate chemical bonding states of Si are formed in Si substrate closer to the interface as compared with those formed utilizing OM. This implies that the interfacial stress in the former is smaller than that in the latter.

Original language	English
Title of host publication	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages	115-122
Number of pages	8
Edition	4
DOIs	https://doi.org/10.1149/1.3572279
Publication status	Published - 2011 Aug 2
Event	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada Duration: 2011 May 1 → 2011 May 6

Publication series

Name	ECS Transactions
Number	4
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
Country	Canada
City	Montreal, QC
Period	11/5/1 → 11/5/6

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3572279

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Suwa, T., Kumagai, Y., Teramoto, A., Muro, T., Kinoshita, T., Ohmi, T., & Hattori, T. (2011). Clear difference between the chemical structure of SiO₂/Si interfaces formed using oxygen radicals versus oxygen molecules. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 (4 ed., pp. 115-122). (ECS Transactions; Vol. 35, No. 4). https://doi.org/10.1149/1.3572279

Clear difference between the chemical structure of SiO₂/Si interfaces formed using oxygen radicals versus oxygen molecules. / Suwa, Tomoyuki; Kumagai, Yuki; Teramoto, Akinobu; Muro, Takayuki; Kinoshita, Toyohiko; Ohmi, Tadahiro; Hattori, Takeo.

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4. ed. 2011. p. 115-122 (ECS Transactions; Vol. 35, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suwa, T, Kumagai, Y, Teramoto, A, Muro, T, Kinoshita, T, Ohmi, T & Hattori, T 2011, Clear difference between the chemical structure of SiO₂/Si interfaces formed using oxygen radicals versus oxygen molecules. in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4 edn, ECS Transactions, no. 4, vol. 35, pp. 115-122, Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting, Montreal, QC, Canada, 11/5/1. https://doi.org/10.1149/1.3572279

@inproceedings{a8d5fcbda0094f1c98002573eb3ff656,

title = "Clear difference between the chemical structure of SiO2/Si interfaces formed using oxygen radicals versus oxygen molecules",

abstract = "Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radicals (OR) versus oxygen molecules (OM) are reported. Most of intermediate oxidation states of Si, so called suboxides, consisting of Si3+, Si2+, and Si1+ are localized at and near the SiO2/Si interfaces. The suboxides formed utilizing OM are located extremely close to the interfaces, while suboxides formed utilizing OR are located not only at the interface but also in the Si substrate. This implies the penetration of a part of OR into the Si substrate to form Si1+ and to relax the interfacial stress. Intermediate chemical bonding states of Si are formed in Si substrate closer to the interface as compared with those formed utilizing OM. This implies that the interfacial stress in the former is smaller than that in the latter.",

author = "Tomoyuki Suwa and Yuki Kumagai and Akinobu Teramoto and Takayuki Muro and Toyohiko Kinoshita and Tadahiro Ohmi and Takeo Hattori",

year = "2011",

month = aug,

day = "2",

doi = "10.1149/1.3572279",

language = "English",

isbn = "9781566778657",

series = "ECS Transactions",

number = "4",

pages = "115--122",

booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11",

edition = "4",

note = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting ; Conference date: 01-05-2011 Through 06-05-2011",

}

TY - GEN

T1 - Clear difference between the chemical structure of SiO2/Si interfaces formed using oxygen radicals versus oxygen molecules

AU - Suwa, Tomoyuki

AU - Kumagai, Yuki

AU - Teramoto, Akinobu

AU - Muro, Takayuki

AU - Kinoshita, Toyohiko

AU - Ohmi, Tadahiro

AU - Hattori, Takeo

PY - 2011/8/2

Y1 - 2011/8/2

N2 - Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radicals (OR) versus oxygen molecules (OM) are reported. Most of intermediate oxidation states of Si, so called suboxides, consisting of Si3+, Si2+, and Si1+ are localized at and near the SiO2/Si interfaces. The suboxides formed utilizing OM are located extremely close to the interfaces, while suboxides formed utilizing OR are located not only at the interface but also in the Si substrate. This implies the penetration of a part of OR into the Si substrate to form Si1+ and to relax the interfacial stress. Intermediate chemical bonding states of Si are formed in Si substrate closer to the interface as compared with those formed utilizing OM. This implies that the interfacial stress in the former is smaller than that in the latter.

AB - Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radicals (OR) versus oxygen molecules (OM) are reported. Most of intermediate oxidation states of Si, so called suboxides, consisting of Si3+, Si2+, and Si1+ are localized at and near the SiO2/Si interfaces. The suboxides formed utilizing OM are located extremely close to the interfaces, while suboxides formed utilizing OR are located not only at the interface but also in the Si substrate. This implies the penetration of a part of OR into the Si substrate to form Si1+ and to relax the interfacial stress. Intermediate chemical bonding states of Si are formed in Si substrate closer to the interface as compared with those formed utilizing OM. This implies that the interfacial stress in the former is smaller than that in the latter.

UR - http://www.scopus.com/inward/record.url?scp=79960876927&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960876927&partnerID=8YFLogxK

U2 - 10.1149/1.3572279

DO - 10.1149/1.3572279

M3 - Conference contribution

AN - SCOPUS:79960876927

SN - 9781566778657

T3 - ECS Transactions

SP - 115

EP - 122

BT - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11

T2 - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting

Y2 - 1 May 2011 through 6 May 2011

ER -