@inproceedings{eca73fc211664d3c8b49d50fd687fbec,
title = "Cleaning-free deposition of highly crystallized Si films on plastic film substrates using pulsed-plasma CVD under near-atmospheric pressure",
abstract = "By employing a pulsed-discharge, near-atmospheric-pressure plasma-enhanced chemical vapor deposition, equally qualified pair of poly-Si films are grown on polyethylene terephthalate (PET) substrates placed at both the grounded and the powered electrodes. This finding leads to a roll-to-roll-type deposition system of cleaning-free operation for film growth.",
author = "M. Matsumoto and S. Ito and Y. Inayoshi and S. Murashige and H. Fukidome and Maki Suemitsu and S. Nakajima and T. Uehara and Y. Toyoshima",
year = "2009",
doi = "10.1149/1.3202672",
language = "English",
isbn = "9781566777421",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "345--350",
booktitle = "ECS Transactions - Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11",
edition = "5",
note = "11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting ; Conference date: 04-10-2009 Through 09-10-2009",
}