Cleaning-free deposition of highly crystallized Si films on plastic film substrates using pulsed-plasma CVD under near-atmospheric pressure

M. Matsumoto, S. Ito, Y. Inayoshi, S. Murashige, H. Fukidome, M. Suemitsu, S. Nakajima, T. Uehara, Y. Toyoshima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

By employing a pulsed-discharge, near-atmospheric-pressure plasma-enhanced chemical vapor deposition, equally qualified pair of poly-Si films are grown on polyethylene terephthalate (PET) substrates placed at both the grounded and the powered electrodes. This finding leads to a roll-to-roll-type deposition system of cleaning-free operation for film growth.

Original languageEnglish
Title of host publicationECS Transactions - Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
Pages345-350
Number of pages6
Edition5
DOIs
Publication statusPublished - 2009 Dec 1
Event11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number5
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting
Country/TerritoryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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