Chronological change of electrical resistance in GeCu2Te3 amorphous film induced by surface oxidation

Yuta Saito, Satoshi Shindo, Yuji Sutou, Junichi Koike

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Unusual chronological electrical resistance change behavior was investigated for amorphous GeCu2Te3 phase change material. More than a 1 order decrease of electrical resistance was observed in the air even at room temperature. The resistance of the amorphous film gradually increased with increasing temperature and then showed a drop upon crystallization. Such unusual behavior was attributed to the oxidation of the amorphous GeCu2Te3 film. From the compositional depth profile measurement, the GeCu2Te3 film without any capping layer was oxidized in air at room temperature and the formed oxide was mainly composed of germanium oxide. Consequently, a highly-conductive Cu-rich layer was formed in the vicinity of the surface of the film, which reduced the total resistance of the film. The present results could provide insight into the chronological change of electrical resistance in amorphous chalcogenide materials, indicating that not only relaxation of the amorphous, but also a large atomic diffusion contributes to the chronological resistance change.

Original languageEnglish
Article number475302
JournalJournal of Physics D: Applied Physics
Volume47
Issue number47
DOIs
Publication statusPublished - 2014 Nov 26

Keywords

  • GeCuTe
  • amorphous
  • oxidation
  • phase change material

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Chronological change of electrical resistance in GeCu<sub>2</sub>Te<sub>3</sub> amorphous film induced by surface oxidation'. Together they form a unique fingerprint.

Cite this