Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

Akihiro Matsutani, Fumitaka Ishiwari, Yoshiaki Shoji, Takashi Kajitani, Takuya Uehara, Masaru Nakagawa, Takanori Fukushima

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We report the etching properties of tripodal paraffinic triptycene (TripC12) used as a thermal nanoimprint lithography (TNIL) resist mask in Cl2 plasma etching. Using thermally nanoimprinted TripC12 films, we achieved microfabrication of a GaAs substrate by Cl2-based inductively coupled plasma (ICP) etching. Attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy confirmed that the chemical structure of TripC12 remains intact after the ICP etching process using Cl2. We believe that TNIL using TripC12 films is useful for fabricating optical/electrical devices and micro-electro-mechanical systems (MEMSs).

Original languageEnglish
Article number06GL01
JournalJapanese journal of applied physics
Volume55
Issue number6
DOIs
Publication statusPublished - 2016 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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