Chip-level warp control of SOI 3-axis accelerometer with the zigzag-shaped z-electrode

Y. Nonomura, Y. Omura, H. Funabashi, T. Akashi, M. Fujiyoshi, Y. Hata, T. Nakayama, M. Esashi

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

We developed a fully-differential 3-axis accelerometer with a Zigzag-Shaped Z-electrode (ZSZ) for motion controls of automobiles and robots. The ZSZ structure is composed of only two silicon layers of an SOI (Silicon-on- Insulator) wafer. The ZSZ structure consists of two kinds of capacitors in a Z-axis direction. The gaps of the capacitors were designed to be same and the sensor detected a capacitance change precisely. However, small gap differences at the capacitors in the Z-axis direction were appeared and it caused unequal sensitivities. This was because the fabricated sensor chip was warped. To overcome this drawback, we have proposed a novel method for chip-level warp control. The warp control is performed by forming a SiO2 frame on a backside of the chip. The frame works as a stress compensator of thermal expansion. The chip-level warp control demonstrated that gaps of the ZSZ were controlled to be equal and the sensor characteristics were also improved. The chip-level warp control is useful for sensors.

Original languageEnglish
Pages (from-to)546-549
Number of pages4
JournalProcedia Engineering
Volume47
DOIs
Publication statusPublished - 2012
Event26th European Conference on Solid-State Transducers, EUROSENSOR 2012 - Krakow, Poland
Duration: 2012 Sep 92012 Sep 12

Keywords

  • 3-axis accelerometer
  • Mems sensor
  • Warp control
  • Zigzag-shaped z-electrod

ASJC Scopus subject areas

  • Engineering(all)

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